Thin film transistor matrix device and method for fabricating the same

ABSTRACT

A thin film transistor matrix device including an insulating substrate; a plurality of lines arranged on the substrate, with the lines being defined as odd-number-th lines alternating with even-number-th lines; a first connection line extending in a direction transverse to the plurality of lines, where the first connection line and the odd-number-th lines are configured and arranged to be electrically connected/disconnected to/from each other; and a second connection line extending in a direction transverse to the plurality of lines, where the second connection line and the ven-number-th lines are configured and arranged to be electrically connected/disconnected to/from each other.

This is a divisional of application Ser. No. 12/770,155, filed Apr. 29,2010, which is a divisional of application Ser. No. 12/489,292, filedJun. 22, 2009, now U.S. Pat. No. 7,947,982, which is a divisional ofapplication Ser. No. 11/377,754, filed Mar. 16, 2006, now U.S. Pat. No.7,575,960, which is a divisional of application Ser. No. 10/660,053,filed Sep. 11, 2003, now U.S. Pat. No. 7,075,108, which is a divisionalof application Ser. No. 10/080,108, filed Feb. 21, 2002, now U.S. Pat.No. 6,767,754, which is a divisional of Ser. No. 09/005,176 filed Jan.8, 1998, now U.S. Pat. No. 6,406,946, which is a continuation of Ser.No. 08/669,272 filed May 29, 1996, now U.S. Pat. No. 5,742,074.

BACKGROUND OF THE INVENTION

The present invention relates to a thin film transistor matrix deviceand a method for fabricating the same, more specifically a TFT-LCD (TFTmatrix-type liquid crystal display device) for use in laptop personalcomputers and wall TVs, and a method for fabricating the same.

TFT-LCDs have characteristics of thinness and lightness, low electricpower consumption, etc. and are expected to have a large market in thefuture as a display device which will take place of CRTs. To realize TFTpanels of high precision, large screens for use in work stations, etc.,the aperture ratio is a significant problem for higher image quality. Tofabricate inexpensive TFT panels, it is important that the TFT panelshave device structures which can be fabricated by the use ofphotolithography techniques.

A pattern layout of a conventional thin film transistor matrix device isshown in FIG. 35.

An image display region 112 is disposed at the center of a transparentinsulating substrate 110, and a plurality of thin film transistors (notshown) and a plurality of picture element electrodes (not shown)connected to the sources of the respective thin film transistors arearranged in a matrix in the region. The gate electrodes of the thin filmtransistors are commonly connected to gate bus lines 114 a and 114 barranged widthwise as viewed in FIG. 35, and the drain electrodesthereof are commonly connected to drain bus lines 116 a and 116 barranged lengthwise as viewed in FIG. 35.

The plural gate bus lines 114 a and 114 b are separated in odd number-thgate bus lines 114 a which are adjacent to each other, and evennumber-th gate bus lines 114 b (in this specification, the term “oddnumber-th lines” is used to refer to the odd numbered lines, namely thefirst, third, fifth, . . . lines; the term “even number-th lines” isused to refer to the even numbered lines, namely the second, fourth,sixth, . . . lines). The odd number-th gate bus lines 114 a areconnected to gate side tab terminals 118 a on the right side as viewedin FIG. 35, and the even number-th gate bus lines 114 b are connected togate side tab terminals 118 b on the left side as viewed in FIG. 35.

The plural drain bus lines 116 are separated in odd number-th drain buslines 116 a which are adjacent to each other, and even number-th drainbus lines 116 b. The odd number-th drain bus lines 116 a are connectedto drain side tab terminals 120 a on the upper side as viewed in FIG.35, and the even number-th drain bus lines 116 b are connected to drainside tab terminals 120 b on the lower side as viewed in FIG. 35.

In the thus-structured thin film transistor matrix device, as describedabove, the gate bus lines 114 a, 114 b, and the drain bus lines 116 a,116 b are respectively formed by independent conducting layer patterns.As a result problems due to electric stresses, such as electrostaticcharges, etc., occur in the process for fabricating the thin filmtransistor and in the process for fabricating the liquid crystal panel,whereby the conducting layer patterns are short-circuited and thecharacteristics of the thin film transistors, such as threshold values,etc., are changed.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a thin film transistormatrix device and a method for fabricating the same, which is free fromoccurrence of short-circuit and characteristic changes due to stresses,such as electrostatic charges, etc. and which can be fabricated withhigh yields.

Another object of the present invention is to provide a thin filmtransistor matrix device and a method for fabricating the same, whichcan be inspected with high precision, so that possible defectiveproducts can be rejected beforehand.

The above-described objects are achieved by a thin film transistormatrix device comprising: transparent insulating substrate; a pluralityof thin film transistors arranged on the transparent insulatingsubstrate in a matrix; a plurality of picture element electrodesarranged on the transparent insulating substrate in a matrix andconnected to the sources of the thin film transistors; a plurality ofbus lines for commonly connecting the gates or the drains of the thinfilm transistors; outside terminals formed on a margin of thetransparent insulating substrate and opposed to the ends of the buslines; and connection lines formed in regions inner of the outsideterminals and commonly connecting said plurality of bus lines, wherebyeven when electric stresses due to electrostatic charges are applied inthe process for fabricating the thin film transistor matrix device, thedevice can be fabricated without short-circuit defects and with littlecharacteristic change and high yields.

In the above-described thin film transistor matrix device it ispreferable that the connection lines include a plurality of connectionlines, said plurality of gate bus lines which are adjacent to each otherbeing respectively commonly connected to said plurality of connectionlines, whereby inspection of high precision is possible by applyingdifferent voltages to the connection lines, so that defective productscan be expelled beforehand.

It is preferable that the above-described thin film transistor matrixdevice further comprises resistant lines which interconnect saidplurality of connection lines and have a higher resistant value than theconnection lines.

The above-described objects are achieved by a transparent insulatingsubstrate; a plurality of thin film transistors arranged on thetransparent insulating substrate in a matrix; a plurality of pictureelement electrodes arranged on the transparent insulating substrate in amatrix and connected to the sources of the thin film transistors; aplurality of gate bus lines for commonly connecting the gates of thethin film transistors; a plurality of drain bus lines for commonlyconnecting the drains of the thin film transistors; first outsideterminals formed on a margin of the transparent insulating substrate andopposed to the ends of the gate bus lines; second outside terminalsformed on a margin of the transparent insulating substrate and opposedto the ends of the drain bus lines; and gate connection lines formed inan inner region of the second outside terminals and commonly connectingsaid plurality of drain bus lines, whereby even when electric stressesdue to electrostatic charges are applied in the process for fabricatingthe thin film transistor matrix device, the device can be fabricatedwithout short-circuit defects and with little characteristic change andhigh yields.

In the above-described thin film transistor matrix device it ispreferable that the thin film transistor matrix device further comprisesresistant lines for interconnecting the gate connection lines and thedrain connection lines, and having a higher resistant value than thegate connection lines and the drain connection lines.

In the above-described thin film transistor matrix device it ispreferable that a first gate connection line and a second gateconnection line respectively commonly connect said plurality of gate buslines which are adjacent to each other, and a first drain connectionline and a second drain connection line respectively commonly connectsaid a plurality of gate drain lines which are adjacent to each other.

In the above-described thin film transistor matrix device it ispreferable that the thin film transistor matrix device further comprisesresistant lines for interconnecting the first and the second gateconnection lines, and the first and the second drain connection linesand having a resistant value than said plurality of connection lines,whereby inspection of high precision is possible by applying differentvoltages to the connection lines, so that defective products can berejected beforehand

The above-described objects are achieved by the method for fabricating athin film transistor matrix device comprising: a first step of formingon a transparent insulating substrate a plurality of gate bus lines forcommonly connecting the gates of thin film transistors, first outsideterminals opposed to ends of the gate bus lines, and a gate connectionline formed in a region inner of the first outside terminals forcommonly connecting said plurality of gate bus lines; a second step offorming a first insulating film on the entire surface; and a third stepof forming on the first insulating film a plurality of drain bus linesfor commonly connecting the drains of the thin film transistors, secondoutside terminals opposed to the ends of the drain bus lines, and adrain connection line formed in a region inner of the second outsideterminals for commonly connecting said plurality of drain bus lines.

The above-described objects are achieved by the method for fabricating athin film transistor matrix device comprising: a first step of formingon a transparent insulating substrate a plurality of gate bus lines forcommonly connecting the gates of thin film transistors, first outsideterminals opposed to the ends of the gate bus lines, and a first gateconnection line for commonly connecting the gate bus lines of one ofgroups in which adjacent ones of said plurality of gate bus lines aredivided; a second step of forming a first insulating film on the entiresurface; a third step of forming on the first insulating film aplurality of drain bus lines for commonly connecting the drains of thethin film transistors, second outside terminals opposed to the ends ofthe drain bus lines, and a first drain connection line for commonlyconnecting the drain bus lines of one of groups in which adjacent onesof said plurality of drain bus lines are divided; a fourth step offorming a second insulating film on the entire surface; and a fifth stepof forming on the second insulating film picture element electrodes, asecond gate connection line for commonly connecting the gate bus linesof the other of the groups in which adjacent ones of said plurality ofgate bus lines are divided, and a second drain connection line forcommonly connecting the drain bus lines of the other of the groups inwhich adjacent ones of said plurality of drain bus lines are divided.

The above-described objects are achieved by the method for fabricating athin film transistor matrix device comprising: a first step of formingon a transparent insulating substrate a plurality of gate bus lines forcommonly connecting the gates of thin film transistors, first outsideterminals opposed to the ends of the gate bus lines, a first gateconnection line for commonly connecting the gate bus lines of one ofgroups in which adjacent ones of said plurality of gate bus lines aredivided, and a first drain connection line for commonly connecting thedrain bus lines of one of groups in which adjacent ones of saidplurality of drain bus lines are divided; a second step of forming afirst insulating film on the entire surface; and a third step forming onthe first insulating film said plurality of drain bus lines for commonlyconnecting the drains of the thin film transistors, second outsideterminals opposed to the ends of the drain bus lines; a second drainconnection line for commonly connecting the drain bus lines of the otherof the groups in which adjacent ones of said plurality of drain buslines are divided, and a second gate connection line for commonlyconnecting the gate bus lines of the other of the groups in whichadjacent ones of said plurality of gate bus lines are divided.

The above-described objects are achieved by the method for fabricating athin film transistor matrix device comprising: a first step of formingon a transparent insulating substrate a plurality of gate bus lines forcommonly connecting the gates of thin film transistors, first outsideterminals opposed to the ends of the gate bus lines, a first gateconnection line for commonly connecting the gate bus lines of one ofgroups in which adjacent ones of said plurality of gate bus lines aredivided, and a first drain connection line for commonly connecting thedrain bus lines of one of groups in which adjacent ones of saidplurality of drain bus lines are divided; a second step of forming afirst insulating film on the entire surface; a third step of forming onthe first insulating film said plurality of drain bus lines for commonlyconnecting the drains of the thin film transistors, second outsideterminals opposed to the ends of the drain bus lines, a second drainconnection line, and a second gate connection line; a fourth step offorming a second insulating film on the entire surface; and a fifth stepof forming on the second insulating film picture element electrodes, afirst connection line for connecting the drain bus lines of the other ofthe groups in which adjacent ones of said plurality of drain lines aredivided to the second drain connection line, and a second connectionline for connecting the gate bus lines of the other of the groups inwhich adjacent ones of said plurality of gate bus lines are divided tothe second gate connection line.

In the above-described method for fabricating a thin film transistormatrix device, it is preferable that the method further comprises afourth step of forming a second insulating film on the entire surfaceafter the third step; and a fifth step of forming on the secondinsulating film picture element electrodes, and a resistant line forinterconnecting the gate connection lines and the drain connectionlines.

In the above-described method for fabricating a thin film transistormatrix device, it is preferable that in the fifth step resistant linesfor interconnecting the first and the second gate connection lines andthe first and the second drain connection lines are formed.

In the above-described method for fabricating a thin film transistormatrix device, it is preferable that after the fabrication steps areover, the gate bus lines are electrically disconnected from the gateconnection lines, and the drain bus lines are electrically disconnectedfrom the drain connection lines.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of the thin film transistor matrix deviceaccording to a first embodiment of the present invention.

FIG. 2 is an enlarged plan view of the thin film transistor matrixdevice of FIG. 1.

FIG. 3 is an enlarged plan view of an image display region of the thinfilm transistor matrix device of FIG. 1.

FIG. 4 is a sectional view of the thin film transistor matrix device ofFIGS. 2 and 3.

FIGS. 5A to 5D are sectional views of the thin film transistor matrixdevice according to the first embodiment of the present invention at therespective steps of a method for fabricating the same (Part 1).

FIGS. 6A to 6D are sectional views of the thin film transistor matrixdevice according to the first embodiment Of the present invention at therespective steps of a method for fabricating the same (Part 2).

FIG. 7 is a plan view of the thin film transistor matrix deviceaccording to a second embodiment of the present invention.

FIG. 8 is an enlarged plan view of the thin film transistor matrixdevice of FIG. 7.

FIG. 9 is a plan view of the thin film transistor matrix deviceaccording to a third embodiment of the present invention.

FIG. 10 is an enlarged plan view of the thin film transistor matrixdevice of FIG. 9.

FIG. 11 is sectional views of the thin film transistor matrix device ofFIG. 10.

FIGS. 12A to 12D are sectional views of the thin film transistor matrixdevice according to the third embodiment of the present invention at therespective steps of a first method for fabricating the same (Part 1).

FIGS. 13A to 13D are sectional views of the thin film transistor matrixdevice according to the third embodiment of the present invention at therespective steps of the first method for fabricating the same (Part 2).

FIG. 14 is a plan view of the thin film transistor matrix deviceaccording to the third embodiment of the present invention at therespective steps of the first method for fabricating the same (Part 1).

FIG. 15 is a plan view of the thin film transistor matrix deviceaccording to the third embodiment of the present invention at therespective steps of the first method for fabricating the same (Part 2).

FIG. 16 is a plan view of the thin film transistor matrix deviceaccording to the third embodiment of the present invention at therespective steps of the first method for fabricating the same (Part 3).

FIG. 17 is a plan view of the thin film transistor matrix deviceaccording to the third embodiment of the present invention at therespective steps of the first method for fabricating the same (Part 4).

FIGS. 18A to 18D are sectional views of the thin film transistor matrixdevice according to the third embodiment of the present invention at therespective steps of a second method for fabricating the same (Part 1).

FIGS. 19A to 19C are sectional views of the thin film transistor matrixdevice according to the third embodiment of the present invention at therespective steps of the second method for fabricating the same (Part 2).

FIG. 20 is a plan view of the thin film transistor matrix deviceaccording to the third embodiment of the present invention at a step ofthe second method for fabricating the same (Part 1).

FIG. 21 is a plan view of the thin film transistor matrix deviceaccording to the third embodiment of the present invention at a step ofthe second method for fabricating the same (Part 2).

FIG. 22 is a plan view of the thin film transistor matrix deviceaccording to the third embodiment of the present invention at a step ofthe second method for fabricating the same (Part 3).

FIG. 23 is a plan view of the thin film transistor matrix deviceaccording to the third embodiment of the present invention at a step ofthe second method for fabricating the same (Part 4).

FIG. 24 is a plan view of the thin film transistor matrix deviceaccording to a fourth embodiment of the present invention.

FIG. 25 is an enlarged plan view of the thin film transistor matrixdevice of FIG. 24.

FIG. 26 is sectional views of the thin film transistor matrix device ofFIG. 25.

FIGS. 27A to 27D are sectional views of the thin film transistor matrixdevice according to the fourth embodiment of the present invention atthe respective steps of a first method for fabricating the same (Part1).

FIGS. 28A to 28D are sectional views of the thin film transistor matrixdevice according to the fourth embodiment of the present invention atthe respective steps of the first method for fabricating the same (Part2).

FIG. 29 is a plan view of the thin film transistor matrix deviceaccording to the fourth embodiment of the present invention at a step ofthe first method for fabricating the same (Part 1).

FIG. 30 is a plan view of the thin film transistor matrix deviceaccording to the fourth embodiment of the present invention at a step ofthe first method for fabricating the same (Part 2).

FIG. 31 is a plan view of the thin film transistor matrix deviceaccording to the fourth embodiment of the present invention at a step ofthe fourth method for fabricating the same (Part 3).

FIG. 32 is a plan view of the thin film transistor matrix deviceaccording to the fourth embodiment of the present invention at a step ofthe fourth method for fabricating the same (Part 4).

FIG. 33 is a plan view of the thin film transistor matrix deviceaccording to a fifth embodiment of the present invention.

FIG. 34 is an enlarged plan view of the thin film matrix device of FIG.33.

FIG. 35 is a plan view of a conventional thin film matrix device.

DETAILED DESCRIPTION OF THE INVENTION 1. A First Embodiment 1.1 ThinFilm Transistor Matrix Device

The thin film transistor matrix device according to a first embodimentof the present invention will be explained with reference to FIGS. 1 to6.

FIG. 1 shows a pattern layout of the thin film transistor matrix deviceaccording to the present embodiment. FIG. 2 is an enlarged view of awiring region of the thin film transistor matrix device. FIG. 3 is anenlarged view of an image display region of the thin film transistormatrix device of FIG. 1. FIG. 4 is a sectional view of the thin filmtransistor matrix device of FIG. 1.

First, with reference to FIG. 1, the general layout of the thin filmtransistor matrix device according to the present embodiment will beexplained.

In the thin film transistor matrix device according to the presentembodiment, a gate drive circuit and a drain drive circuit are mountedonly on one side of a transparent insulating substrate 10.

An image display region 12 is provided at the center of the transparentinsulating substrate 10, and a plurality of thin film transistors (notshown) and a plurality of image electrodes (not shown) connected to thesources of the thin film transistors are arranged in a matrix in theregion 12. The gate electrodes of the plural thin film transistors arecommonly connected to the gate bus lines 14 which are arranged widthwiseas viewed in FIG. 1, and the drain electrodes of the plural thin filmtransistors are commonly connected to drain bus lines 16 which arearranged lengthwise as viewed in FIG. 1.

The gate bus lines 14 are extended to the left as viewed in FIG. 1 andhave bumps 18 formed on the ends thereof. On a margin of the transparentinsulating substrate 10 there are formed input terminals 20 whichreceives signals from the outside. The inner ends of the input terminals20 and the bumps 18 of the gate bus lines 14 are opposed to each otherin IC chip regions 22 where driver IC chips (not shown) are disposed.

A gate connection line 24 which commonly connects with the gate buslines 14 is longitudinally in the IC chip region 22 between the inputterminals 20 and the bumps 18. The gate connection line 24 and the bumps18 of the gate bus lines 14 are connected with each other by thinconnection lines 26. The thin connection lines 26 are finally melted offby laser beams to electrically disconnect the gate bus lines 14 from thegate connection line 24.

The drain bus lines 16 are extended upward as viewed in FIG. 1, andbumps 28 are formed on the ends of the drain bus lines 16. Inputterminals 30 which receive signals from the outside are formed on amargin of the transparent insulating substrate 10. The inner ends of theinput terminals 30 and the bumps 28 of the drain bus lines 16 areopposed to each other in an IC chip region 32 where driver IC chips (notshown) are mounted.

A drain connection line 34 which commonly connects the drain bus linesis extended widthwise as viewed in FIG. 1 in the IC chip region 32between the input terminals 30 and the bumps 28. Thin connection lines36 interconnect the drain connection line 34 and the bumps 28 of thedrain bus lines 16. The thin connection lines 36 are finally melted offby laser beams to electrically disconnect the drain bus lines 14 fromthe drain connection line 34.

The gate connection line 24 and the drain connection line 34 areconnected with each other by a resistant wire having a higher resistancevalue than the gate connection line 24 and the drain connection line 34.

Next, the thin film transistor matrix device according to the presentembodiment will be detailed with reference to FIGS. 2 to 4. In FIG. 4,the drawing on the left is a sectional view of the bumps 28 of the drainbus lines 16 along the line A-A′ in FIG. 2, the drawing on the right isa sectional view of the bumps 18 of the gate bus lines 14 along the lineB-B′ in FIG. 2, and the drawing at the center is a sectional view of thethin film transistors and the picture element electrodes along the lineC-C′ in FIG. 3.

The image display unit 12 of the thin film transistor matrix device willbe detailed with reference to the plan view of the image display regionof FIG. 3 and the line C-C′ sectional view in FIG. 4.

FIG. 3 shows a plane structure of the image display unit 12. The thinfilm transistors 40 are disposed at the intersections between the gatebus lines 14 and the drain bus lines 16. The thin film transistors 40have the gate electrodes 40 g connected to the gate bus lines 14, thedrain electrodes 40 d connected to the drain bus lines 16 and the sourceelectrodes 40 s connected to the picture element electrodes 42.Capacitors 44 are disposed at the centers of the picture elementelectrodes 42.

A sectional structure of the image display unit 12 is shown by the C-C′sectional view in FIG. 4. On the transparent insulating substrate 10there are formed the gate bus lines 14 of a metal layer 46 of, e.g., Alor Cr, and capacitor electrodes 46 a of the capacitors 44. The gate buslines 14 and the capacitor electrodes 46 a share the same layer with thegate electrodes 40 g.

On the metal layer 46 there is formed a first insulating film 48 of anSiN film, a two-layer film of an SiO₂ film and an SiN film, or others.The first insulating film 48 shares the same layer with a gateinsulating film of the thin film transistors 40.

On the first insulating film 48 there is formed a semiconductor activelayer 50 of, e.g., i-type a-Si. The semiconductor active layer 50 sharesthe same layer with a channel layer of the thin film transistors 40. Onthe semiconductor active layer 50 there are formed the source electrodes40 s of the metal layer 52 of, e.g., Al, Cl or others, and counterelectrodes 52 a of the capacitors 44.

A second insulating film 54 of, e.g., an SiN film, a two-layer film ofan SiO₂ film and an SiN film, or others, is formed on the metal layer52. In the second insulating film 54, contact holes are formed on thesource electrodes 40 s and the counter electrodes 52 a.

An transparent electrode film 56 of, e.g., ITO or others, is formed onthe second insulating film 54. The transparent electrode film 56 formsthe picture element electrodes 42 and is connected to the sourceelectrodes 40 s and the counter electrodes 52 a through the contactholes.

The bumps 28 of the drain bus lines 16 of the thin film transistormatrix device will be detailed with reference to the plan view of FIG. 2and the A-A′ sectional view in FIG. 4.

The first insulating film 48 is formed on the transparent insulatingsubstrate 10. The semiconductor active layer 50 and the metal layer 52are laid on the first insulating film 48. The second insulating film 53is formed on the metal layer 52. Contact holes are formed in the secondinsulating film 54 on the metal layer 52. The transparent electrode film56 is formed on the second insulating film 54. The transparent electrodefilm 56 is connected to the metal layer 52 through the contact holes.The bumps 28 are constituted by the transparent electrode film 56 andthe metal layer 52. The drain connection line 34 commonly connecting thedrain bus lines 16, and the thin connection lines 26 share the metallayer 52 with the bumps 28.

The bumps 18 of the gate bus lines 14 of the thin film transistor matrixdevice will be explained with reference to the plan view of FIG. 2 andthe B-B′ sectional view in FIG. 4.

The metal layer 46 is formed on the transparent insulating film 10. Thefirst insulating film 48 and the second insulating film 54 are formed onthe metal layer 46. Contact holes are formed in the first and the secondinsulating films 48, 54 on the metal layer 46. The transparent electrodefilm 56 is formed on the second insulating film 54. The transparentelectrode film 56 is connected to the metal layer 46 through the contactholes. The transparent electrode film 56 and the metal layer 46constitute the bumps 18. The bumps 18 may be constituted by one of thetransparent electrode film 56 and the metal layer 46. The gateconnection line 24 commonly connecting the gate bus lines 14, and thethin connection lines 26 share the metal layer 46 with the bumps 18.

A liquid crystal panel is constituted by the above-described thin filmtransistor matrix device. An opposed substrate (not shown) having acolor filter formed thereon is prepared, and a liquid crystal issandwiched between the thin film transistor matrix device and theopposed substrate, and the liquid crystal panel is prepared.

A circuit substrate (not shown) for the liquid crystal panel, whichincludes peripheral circuits, such as a drive circuit, is prepared. Theliquid crystal panel and the circuit substrate are connected by aconnection line (not shown), such as a flexible cable or others, and aliquid crystal display unit is prepared.

1.2 Method for Fabricating the Thin Film Transistor Matrix Device

Then, the method for fabricating the thin film transistor matrix deviceaccording to the present embodiment will be explained with reference toFIGS. 5 and 6. In the this method five masks are used.

First, the metal layer 46 of, e.g., Al, Cr or others is formed bysputtering on a transparent insulating substrate 19, such as a glasssubstrate or others. The metal layer 46 is patterned by the use of afirst mask to form the gate bus lines 14, the gate electrodes 42 a, thecapacitor electrodes 46 a, the metal layer 46 of the bumps 18, the gateconnection line 24 and the thin connection lines 26 (FIG. 5A).

Then, the first insulating film 48 of an SiN film, a two-layer film ofSiO₂ film and SiN film, or others is formed by plasma CVD.

Next, the semiconductor active layer 50 of non-doped i-type a-Si and aprotection film (not shown) of an SiO₂ film or an SiN film arecontinuously formed on the first insulating film 48 by plasma CVD (FIG.58). Subsequently all the protection film is etched off except a partthereof on the TFT channel region with a hydrofluoric acid buffersolution or others and by the use of a second mask.

Then, an n⁺-type a-Si layer (not shown) is formed on the entire surfaceby plasma CVD.

Then, the metal layer 52 of Al, Cr, or others is formed on the n⁺-typea-Si layer by sputtering (FIG. 5C).

Then, by the use of a third mask, the metal layer 52 and thesemiconductor active layer 50 are patterned to form the metal layers 52of the bumps 28, the source electrodes 40 s, the counter electrodes 52a, the drain electrodes 40 d, drain bus lines 16, the drain connectionline 34 and the thin connection lines 26 (FIG. 5D).

Next, the second insulation film 54 of an SiN film, a two-layer film ofan SiO₂ film and an SiN film, or others is formed on the entire surfaceby plasma CVD (FIG. 6A).

Next, by the use of a fourth mask, the second insulation film 54 and thefirst insulation film 48 are patterned to form the contact holes for thebumps 28, the contact holes for the source electrodes 40 s, the contactholes for the counter electrodes 52 a, the contact holes for the bumps18 and the contact hole for the resistant line 38 (FIG. 6B).

Then, the transparent electrode film 56 is formed on the entire surfaceby sputtering (FIG. 6C).

Next, by the use of a fifth mask, the transparent electrode film 56 ispatterned to form the bumps 28, the picture element electrodes 42, theresistant line 38 (FIG. 6D). The resistant line 38 is so patterned thatthe end of the gate connection line and the end of the drain connectionline 34 are connected with each other.

Thus, by the use of 5 masks, the thin film transistor matrix device isfabricated.

According to the present embodiment, the gate bus lines 14 are commonlyconnected to the gate connection line 24 through the thin connectionlines 26, and the drain bus lines 16 are commonly connected to the drainconnection line 34 through the thin connection lines 36, whereby in theprocesses for fabricating the thin film transistors and the liquidcrystal panel, no local charges are present even when electrostaticcharges are applied, and electric stresses can be mitigated.

After the fabrication processes in which electrostatic charges, etc. areapplied are over, the thin connection lines 26, 36 are melted off by alaser or other to electrically disconnect the gate bus lines 14 from thegate connection line 24 and the drain bus lines 16 from the drainconnection line 34.

2. A Second Embodiment

The thin film transistor matrix device according to a second embodimentof the present invention will be explained with reference to FIGS. 7 and8.

FIG. 7 shows a pattern layout of the thin film transistor matrix deviceaccording to the present embodiment. FIG. 8 is an enlarged view of thewiring region of the thin film transistor matrix device of FIG. 7. Thesame members and members of the same kinds of the thin film transistormatrix device according to the present embodiment as those of the thinfilm transistor matrix device according to the first embodiment arerepresented by common reference numerals to simplify or not to repeattheir explanation.

The thin film transistor matrix device according to the presentembodiment is characterized in that adjacent ones 14 a, 14 b of aplurality of gate bus lines 14 are respectively commonly connected, andadjacent ones 16 a, 16 b of a plurality of drain bus lines 16 arerespectively commonly connected.

As shown in FIGS. 7 and 8, a plurality of gate bus lines 14 are dividedin odd number-th gate bus lines 14 a and even number-th gate bus lines.

The odd number-th gate bus lines 14 a have bumps 18 a formed on the endson the left side as viewed in FIG. 7 and have the ends on the right sideas viewed in FIG. 7 commonly connected to a gate connection line 24 a.The gate connection line 24 a is extended along the edge of atransparent insulating substrate 10.

The even number-th gate bus lines 14 b have the bumps 18 b formed on theends on the left side as viewed in FIG. 7. The bumps 18 b are commonlyconnected to the gate connection line 24 b through thin connection lines26 b. The gate connection line 24 b is extended longitudinally in an ICchip region 22 between input terminals 20 and the bumps 18 b.

Odd number-th drain bus lines 16 a have bumps 28 a formed on the ends onthe upper side as viewed in FIG. 7. The bumps 28 a are commonlyconnected to a drain connection line 34 a through thin connection lines36 a. The drain connection line 34 a is extended widthwise in th IC chipregion 32 between the input terminals 30 and the bumps 28 a.

The even number-th drain bus lines 16 b have the bumps 29 b formed onthe end on the upper side as viewed in FIG. 7 and the ends on the lowerend commonly connected to a drain connection line 34 b. The drainconnection line 34 b is extended along the lower edge of the transparentinsulating substrate 10.

The gate connection lines 24 a, 24 b and the drain connection lines 34a, 34 b are interconnected by resistant lines 38 a, 38 b, 38 c, 38 d.The resistant line 38 a interconnects the gate connection line 24 a andthe drain connection line 34 a; the resistant line 38 b interconnectsthe gate connection line 24 a and the drain connection line 34 b; theresistant line 38 c interconnects the gate connection line 24 b and thedrain connection line 34 a; and the resistant line 38 d interconnectsthe gate connection line 24 b and the drain connection line 34 b.

Thus, according to the present embodiment, the gate bus lines 14 a, 14 bare respectively commonly connected to the gate connection lines 24 a,24 b. The drain bus lines 16 a, 16 b are respectively commonly connectedto the drain connection lines 34 a, 34 b, whereby in the processes forfabricating the thin film transistors and the liquid crystal panel, nolocal charges are present even when electrostatic charges are applied,and electric stresses can be mitigated.

For higher inspection precision, a test in which different voltages areapplied to adjacent gate bus lines and also to adjacent drain bus linesis preferred to a test in which the same voltage is applied to all thegate bus lines and to all the drain bus lines. According to the presentembodiment, adjacent ones 14 a, 14 b of the gate bus lines 14 arerespectively commonly connected, and adjacent ones 24 a, 24 b of thedrain bus lines 24 are respectively commonly connected, whereby tests ofhigh precision can be conducted even by applying different voltages toadjacent gate bus lines and also to adjacent drain bus lines.

3. A Third Embodiment 3.1 Thin Film Transistor Matrix Device

The thin film transistor matrix device according to a third embodimentof the present invention will be explained with reference to FIGS. 9 to11.

FIG. 9 shows a pattern layout of the thin film transistor matrix deviceaccording to the present embodiment. FIG. 10 is an enlarged view of thewiring region of the thin film transistor matrix device of FIG. 9. FIG.11 is a sectional view of the thin film transistor matrix device of FIG.9. The same members or members of the same kinds of the thin filmtransistor matrix device according to the present embodiment as those ofthe thin film transistor matrix device according to the first and thesecond embodiments are represented by common reference numerals tosimplify or not to repeat their explanation.

The thin film transistor matrix device according to the presentembodiment is characterized in that adjacent ones 14 a, 14 b of aplurality of gate bus lines 14 are respectively commonly connected, andadjacent ones 16 a, 16 b of a plurality of drain bus lines 16 arerespectively commonly connected; and gate connection lines 24 a, 24 bwhich commonly connect respectively the gate bus lines 14 a, 14 b arearranged on the same side of a transparent insulating substrate, anddrain connection lines 34 a, 34 b which commonly connect respectivelythe drain bus lines 16 a, 16 b are arranged on the same side of thetransparent insulating substrate 10.

The plane layout of the thin film transistor matrix device according tothe present embodiment will be explained with reference to FIGS. 9 and10.

A plurality of gate bus lines 14 are divided in odd number-th gate buslines 14 a and even number-th gate bus lines 14 b which are adjacent toeach other.

Bumps 18 a are formed on the ends of the odd number-th gate bus lines 14a on the left side as viewed in FIG. 9. The bumps 18 a are commonlyconnected to the gate connection line 24 a through thin connection lines26 a and contact holes 27.

Bumps 18 b are formed on the ends of the odd number-th gate base lines14 b on the left side as viewed in FIG. 9. The bumps 18 b are commonlyconnected to the gate connection line 24 b through thin connection lines26.

The gate connection lines 24 a, 24 b are extended longitudinally throughan IC chip 22 between input terminals 20 and the bumps 18 a, 18 b.

Bumps 28 a are formed on the ends of the odd number-th bus lines 16 a onthe upper side as viewed in FIG. 9. The bumps 28 a are commonlyconnected to the drain connection line 34 a through thin connectionlines 36 a and contact hole 37.

Bumps 28 b are formed on the ends of the even number-th drain bus lines16 b on the upper end as viewed in FIG. 9. The bumps 28 b are commonlyconnected to the drain connection line 34 b through thin connectionlines 36 b.

The drain connection lines 34 a, 34 b are extended transversely throughan IC chip region 32 between input terminals 30 and the bumps 28 a, 28b.

The gate connection lines 24 a, 24 b and the drain connection lines 34a, 34 b are connected with each other by resistant lines 38 a, 38 b, 38c, 38 d. The resistant line 38 a interconnects the gate connection line24 a and the gate connection line 24 b; the resistant line 38 binterconnects the gate connection line 24 a and the drain connectionline 34 b; the resistant line 38 c interconnects the gate connectionline 24 b and the drain connection line 34 a; and the resistant line 38d interconnects the drain connection line 34 a and the drain connectionline 34 b.

Then, a sectional structure of the thin film transistor matrix deviceaccording to the present embodiment will be explained with reference toFIG. 11.

A sectional. structure of the vicinity of the drain connection lines 34a, 34 b will be explained with reference to the plan view of FIG. 10 andthe sectional view along the line A-A′.

A first insulating film 48 is formed on a transparent insulatingsubstrate 10. On the first insulating film 48, the thin connection lines36 b and the drain connection line 34 a are formed of the same layer asa semiconductor active layer 50 and a metal active layer 52. A secondinsulating film 54 is formed on the metal layer 52, and the contactholes 37 are formed on the second insulating film 54. On the secondinsulating film 54 the drain connection line 34 b is formed of the samelayer as an transparent electrode film. The drain connection line 34 bis connected to the thin connection lines 36 b through the contact holes37.

A sectional structure of the vicinity of the gate connection lines 24 a,24 b will be explained with reference to the plan view of FIG. 10 andthe B-B′ sectional view of FIG. 11.

On the transparent insulating substrate 10, the gate connection line 24b and the thin connection lines 26 a are formed of the same layer as ametal layer 46. The first and the second insulating films 48, 54 areformed on the metal layer 46. The contact holes 27 are formed in thefirst and the second insulating films 48, 54 on the thin connectionlines 26 a. The gate connection line 24 a is Connected to the thinconnection lines 26 a through the contact holes 27.

3.2 A First Fabrication Method

Then, the method for fabricating the thin film transistor matrix deviceaccording to the present embodiment will be explained with reference toFIGS. 12 to 17. FIGS. 12A-12D and 13A-13D are A-A′ sectional views andB-B′ sectional views of the thin film transistor matrix device at therespective steps of the first fabrication method. FIGS. 14 to 17 areenlarged plan views of the thin film transistor matrix device at therespective fabrication steps.

The thin film transistor matrix device according to the presentembodiment has the gate connection lines 24 a, 24 b formed on the layerswhich are different from each other but can be fabricated by the use of5 masks as in the first embodiment.

The metal layer 46 of, e.g., Al, Cr or others is formed by sputtering ona transparent insulating substrate 10, such as a glass substrate orothers (FIG. 12A).

Then, by the use of a first mask, the metal layer 46 is patterned toform the gate bus lines 14 a, 14 b, the gate electrodes 42 a, capacitorelectrodes 46, the gate connection line 24 b, the thin connection lines26 a, 26 b and input electrodes 20 (FIGS. 12B and 14).

Then the first insulating film 48 of an SiN film or a two layer film ofan SiO₂ film and an SiN film is formed on the entire surface by plasmaCVD.

Then, on the first insulating film, the semiconductor active layer 50 ofnon-doped i-type a-Si, and a protection layer (not shown) of an SiO₂film or an SiN film are continuously formed. Subsequently, by the use ofa second mask, all the protection film except part thereof in a TFTregion is etched off with a hydrofluoric acid buffer solution.

Then, an n⁺-type a-Si layer (not shown) is formed on the entire surfaceby plasma CVD. Then, the metal layer 52 of Al, Cr or others is formed onthe n⁺-type a-Si layer by sputtering (FIG. 12C).

The, by the use of a third mask, the metal layer 52 and thesemiconductor active layer 50 are patterned to form the sourceelectrodes 40 s, the drain electrodes 40 d, the drain bus lines 16 a, 16b, the drain connection line 34 a, the thin connection lines 36 a, 36 band input electrodes 30 (FIGS. 12D and 15).

Then, the second insulating film 54 of an SiN film or a two layer filmof an SiO₂ film and an SiN film is formed on the entire surface byplasma CVD (FIG. 13A).

Then, by the use of a fourth mask, the second insulation film 54 and thefirst insulation film 48 are patterned to form the contact holes 27, thecontact holes 37, and contact holes for the resistant lines 38 (FIGS.13B and 16).

Then, the transparent electrode film 56 is formed on the entire surfaceby sputtering (FIGS. 13B and 16).

Next, by the use of a fifth mask, the transparent electrode film 56 ispatterned to form picture element electrodes 52, the gate connectionline 34 b, and the resistant lines 38 a, 38 b, 38 c, 38 d (FIGS. 13D and17). The resistant lines 38A, 38B, 38C, 38D are patterned so as tointerconnect the ends of the gate connection lines 24 a, 24 b, and theends of the drain connection lines 34 a, 34 b.

Thus, as in the first embodiment, by the use of only 5 masks, the thinfilm transistor matrix device according to the present embodiment can befabricated.

3.3 A Second Fabrication Method

Then, another method for fabricating the thin film transistor matrixdevice according to the present embodiment will be explained withreference to FIGS. 18 to 23. FIGS. 18A-18D and 19A-19C are respectivelyA-A′ line sectional views and B-B′ sectional views of the thin filmtransistor matrix device at the respective steps of the secondfabrication method. FIGS. 20 to 23 are enlarged plan views of the thinfilm transistor matrix device at the respective steps of the secondfabrication method.

In the first fabrication method, the contact hole 27 through which thegate connection line 24 a and the gate connection line 24 b areconnected with each other is formed in the first insulating film 48 andthe second insulating film 54. The gate connection line 24 a and thegate connection line 24 b define a too large step therebetween to bewell connected with each other.

By the second fabrication method, one mask is added, whereby large stepsare not formed between the lines connected with each other through thecontact holes. The present embodiment uses 6 masks, which is 1 mask morethan the first embodiment.

The metal layer 46 of, e.g., Al, Cr or others is formed on a transparentinsulating substrate 10, such as a glass substrate by sputtering (FIG.18A).

Then, the metal layer 46 is patterned by the use of a first mask to formthe gate bus lines 14 a, 14 b, the gate electrodes 42 a, the capacitorelectrodes 46 a, the drain connection line 34 b, the gate connectionline 24 b, the thin connection lines 26 a, 26 b and the input electrodes20 (FIGS. 18B and 20).

Then, the first insulating film 48 of an SiN film, a two-layer film ofan SiO₂ film and an SiN film, or others on the entire surface by plasmaCVD (FIG. 18C).

Next, on the first insulating film 48, the semiconductor active layer 48of non-doped i-type a-Si and the protection film (not shown) of an SiO₂film or an SiN film are continuously formed by plasma CVD. Subsequently,by the use of a second mask, all the protection film except a partthereof in the TFT channel region is etched off with a hydrofluoric acidbuffer solution.

Then, by the use of an additional mask, the first insulating film 48 ispatterned to form the contact holes 37 through which the drainconnection line 34 b and the thin connection lines 36 b are connectedwith each other, and the contact holes 27 through which the thinconnection lines 26 a and the gate connection line 24 a are connectedwith each other (FIGS. 18D and 21).

Next, the n⁺-type a-Si layer (not shown) is formed on the entire surfaceby plasma CVD. Then, the metal layer 52 of Al, Cr or others is formed onthe n⁺-type a-Si layer by sputtering (FIG. 19A).

Then, by the use of a third mask, the metal layer 52 and thesemiconductor active layer 50 are patterned to form the sourceelectrodes 40 s, the drain electrodes 40 d, the drain bus lines 16 a, 16b, the drain connection line 34 a, the thin connection lines 36 a, 36 b,the gate connection line 24 a and the input electrodes 30 (FIGS. 19B and22).

Then, the second insulating film 54 of an SiN film, a two layer film ofSiO2 film and an SiN film, or others is formed on the entire surface byplasma CVD (FIG. 19C).

Next, by the use of a fourth mask, the second insulating film 54 and thefirst insulating film 48 are patterned to form the contact holes for theresistant lines 38.

Next, the transparent electrode film 56 is formed on the entire surfaceby sputtering.

Then, by the use of a fifth mask, the transparent electrode film 56 ispatterned to form the picture element electrodes 42, and the resistantlines 38 a, 38 b, 38 c, 38 d (FIG. 23).

Thus, totally 6 masks including the additional mask are used, wherebythe gate connection line 24 a and the gate connection line 24 b define asmall step therebetween, which enables good connection therebetween.

Thus, according to the present embodiment, the gate bus lines 14 a, 14 bare commonly connected respectively by the gate connection lines 24 a,24 b, and the drain bus lines 16 a, 16 b are commonly connectedrespectively by the drain connection lines 34 a, 34 b, whereby in theprocess for fabricating the thin film transistors and the process forforming a liquid crystal panel, no local charge is present even whenelectrostatic charges are applied, whereby electric stresses can bemitigated.

For higher inspection precision, a test in which different voltages fromeach other are applied to the gate bus lines which are adjacent to eachother and to the drain bus lines which are adjacent to each other ispreferred to a test in which the same voltage is applied to all the gatebus lines and all the drain bus lines. According to the presentembodiment, the gate bus lines 14 a, 14 b which are adjacent to eachother are respectively commonly connected, and the drain bus lines 24 a,24 b which are adjacent to each other are respectively commonlyconnected, whereby different voltages from each other are applied to theadjacent gate bus lines and the drain bus lines for high precisioninspection.

4. A Fourth Embodiment 4.1 Thin Film Transistor Matrix Device

The thin film transistor matrix device according to a fourth embodimentof the present invention will be explained with reference to FIGS. 24 to26.

FIG. 24 is a view of the pattern layout of the thin film transistormatrix device according to the present embodiment. FIG. 25 is anenlarged view of the wiring region of the thin film transistor matrixdevice of FIG. 24. FIG. 26 is sectional views of the thin filmtransistor matrix device of FIG. 24. The same members and members of thesame kinds of the present embodiment as the thin film transistor matrixdevice according to the first to the third embodiments are representedby common reference numerals to simplify or not to repeat theirexplanation.

In the thin film transistor matrix device according to the presentembodiment as well as the third embodiment, gate connection lines 24 a,24 b respectively commonly connecting gate bus lines 14 a, 14 b whichare adjacent to each other are arranged on the same side of atransparent insulating substrate 10, and drain connection lines 34 a, 34b respectively commonly connecting drain bus lines 16 a, 16 b arearranged on the same side of the transparent insulating substrate 10,but the present embodiment is different from the third embodiment in theconnection structure between the gate bus lines 14 a, 14 b and the gateconnection lines 24 a, 24 b and that between the drain bus lines 16 a,16 b and the drain connection lines 34 a, 34 b.

First, a layout of the thin film transistor matrix device according tothe present embodiment in a plane will be explained with reference toFIGS. 24 and 25.

A plurality of gate bus lines 14 are divided into odd number-th gate buslines 14 a and even number-th gate bus lines 14 b which are adjacent toeach other.

Bumps 18 a are formed on the ends of the odd number-th gate bus lines 14a on the right side as viewed in FIG. 24. The bumps 18 a are commonlyconnected to the gate connection line 24 a through thin connection lines26 a, contact holes 27 b, a connection line 25 and contact holes 27 a.

Bumps 18 b are formed on the ends of the even number-th gate bus lines14 b on the left side as viewed in FIG. 24. The bumps 18 b are commonlyconnected to the gate connection line 24 b through thin connection lines26 b.

The gate connection lines 24 a, 24 b are extended longitudinally throughan IC chip region 22 between inputs terminals 20 and the bumps 18 a, 18b.

Bumps 28 a are formed on the ends of the odd number-th drain bus lines16 a on the upper end as viewed in FIG. 24. The bumps 28 a are commonlyconnected to the drain connection line 34 a through thin connectionlines 36 a, contact holes 37 b, a connection line 35 and contact holes37 a.

Bumps 28 b are formed on the ends of the even number-th drain bus lines16 b on the upper end as viewed in FIG. 24. The bumps 28 b are commonlyconnected to the drain connection line 34 s through thin connectionlines 36 b.

The drain connection lines 34 a, 34 b are extended longitudinallythrough an IC chip region 32 between input terminals 30 and the bumps 28a, 28 b.

Resistant lines 38 a, 38 b, 38 c, 38 d interconnect the gate connectionlines 24 a, 24 b and the drain connection lines 34 a, 34 b. Theresistant line 38 a interconnects the gate connection line 24 a and thegate connection line 24 b; the resistant line 38 b interconnects thegate connection line 24 a and the drain connection line 34 b; theresistant line 38 c interconnects the gate connection line 24 b and thedrain connection line 34 a; and the resistant line 38 d interconnectsthe drain connection line 34 a and the drain connection line 34 b.

Then, a sectional structure of the thin film transistor matrix deviceaccording to the present embodiment will be explained.

A sectional structure of the vicinity of the drain connection lines 34a, 34 b will be explained with reference to the plan view of FIG. 25 andthe sectional view along the line A-A′ in FIG. 26.

On a transparent insulating substrate 10, the drain Connection line 34 bof the same layer as the metal layer 46 is formed. A first insulatingfilm 48 is formed on the transparent insulating film 10 and the drainconnection line 34 b. On the first insulating film 48, the thinconnection line 36 b and the drain connection lines 34 a of the samelayer as the semiconductor active layer 50 and the metal layer 52. Asecond insulating film 54 is formed on the metal layer 52. The contactholes 37 a are formed in the first and the second insulating films 48,54 and reach the drain connection line 34 b. The contact holes 37 b areformed in the second insulating film 54 and reach the thin connectionlines 36 b. The connection line 35 of the same layer as a transparentelectrode film 56 is formed on the second insulating film 54 andinterconnects the thin connection lines 36 b and the drain connectionline 34 b through the contact holes 37 a, 37 b.

A sectional structure of the vicinity of the gate connection lines 24 a,24 b will be explained with reference to the plan view of FIG. 25 and asectional view along the line B-B′ in FIG. 26.

On the transparent insulating substrate 10, the gate connection line 24b and the thin connection lines 26 a of the same layer as the metallayer 46 are formed. On the metal layer 46, the first insulating film 48is formed. On the first insulating film 48, the gate connection line 24a of the same layer as the semiconductor active layer 50 and the metallayer 52 is formed. The second insulating film 54 is formed on the firstinsulating film 48 and the gate connection line 24 a. The contact holes27 a are formed in the second insulating film 54 and reach the gateconnection line 24 a. The contact holes 27 b are formed in the first andthe second insulating films 48, 54 and reach the thin connection lines26 a. On the second insulating film 54, the connection line 25 of thesame layer as the transparent electrode film 56 is formed andinterconnects the thin connection lines 26 a and the gate connectionline 24 a through the contact holes 27 a, 27 b.

4.2 Fabrication Method

Then, the method for fabricating the thin film transistor matrix deviceaccording to the present embodiment will be explained with reference toFIGS. 27 to 32. FIGS. 27A-27D and 28A-28D are sectional views of thethin film transistor matrix device according to the present embodimentat the respective step of the fabrication method, which are along thelines A-A′ and the line B-B′. FIGS. 29 to 32 are enlarged plan views ofthe thin film transistor matrix device at the respective steps of thefabrication method.

In the present embodiment, although the gate connection lines 24 a, 24 band the drain connection lines 34 a, 34 b are formed of the differentlayers, the thin film transistor matrix device according to the presentembodiment can be fabricated by the use of only 5 masks as in the firstembodiment.

First, the metal layer 46 of, e.g., Al, Cr or others is formed on atransparent insulating substrate 10, such as a glass substrate bysputtering (FIG. 27A).

Next, by the use of a first mask, the metal layer 46 is patterned toform the drain connection line 34 b, the gate bus lines 14 a, 14 b, gateelectrodes 42 a, capacitors 46 a, the gate connection line 24 b, thethin connection lines 26 a, 26 b, and input electrodes 20 (FIG. 27B and29).

The first insulating film 48 of an SiN film, a two-layer film of an SiO₂film and an SiN film or others is formed on the entire surface by plasmaCVD.

Then, on the insulating film 48, the semiconductor active layer ofnon-doped i-type a-Si and a protection film (not shown) of an SiO₂ filmor an SiN film are continuously formed. Subsequently by the use of asecond mask, all the protection film except a part thereof in a TFTchannel region is etched off with a hydrogen fluoride buffer solution.

Then, an n⁺-type a-Si film (not shown) is formed on the entire surfaceby plasma CVD. Then, the metal layer 52 of Al, Cr or others is formed onthe n⁺-type a-Si layer by sputtering (FIG. 27C).

Next, by the use of a third mask, the metal layer 52 and thesemiconductor active layer 56 are patterned to form source electrodes 40s, drain electrodes 40 d, the drain bus lines 16 a, 16 b, the drainconnection lines 34 a, the thin connection lines 36 a, 36 b, inputelectrodes 30, and the gate connection line 24 a (FIGS. 27D and 30).

Then, the second insulating film 54 of an SiN film, a two-layer film ofan SiO₂ film and an SiN film or others is formed on the entire surfaceby plasma CVD (FIG. 28A).

Next, the second and the first insulating films 54, 48 are patterned bythe use of a fourth mask to form the contact holes 27 a, 27 b, thecontact holes 37 a, 37 b and the contact holes for the resistant lines38 (FIGS. 28B and 31).

Then, the transparent electrode film 56 is formed on the entire surfaceby sputtering (FIG. 28C).

Then, the transparent electrode film 56 is patterned by the use of afifth mask to form the connection line 35, picture element electrodes42, the gate connection line 24 a, the drain connection line 34 b, theresistant lines 38 a, 38 b, 38 b, 38 d, and the connection line 25(FIGS. 28D and 32). The resistant lines 38 a, 38 b, 38 c, 38 d arepatterned so as to interconnect the ends of the gate Connection lines 24a, 24 b and the ends of the drain Connection lines 34 a, 34 b.

Thus, by the use of only 5 masks, the thin film transistor matrix deviceaccording to the present embodiment can be fabricated as the firstembodiment.

As described above, according to the present embodiment, the gate buslines 14 a, 14 b are commonly connected to the gate connection lines 24a, 24 b, and the drain bus lines 16 a, 16 b are commonly connected tothe drain connection lines 34 a, 34 b, whereby in the process forfabricating the thin film transistor matrix device and the process forforming a liquid crystal panel, even when electrostatic charges areapplied, no local presence of charges, and electric stresses can bemitigated.

For higher inspection precision, a test in which different voltages areapplied to adjacent gate bus lines and also to adjacent drain bus linesis preferred to a test in which the same voltage is applied to all thegate bus lines and to all the drain bus lines. According to the presentembodiment, adjacent ones 14 a, 14 b of the gate bus lines 14 arerespectively commonly connected, and adjacent ones 24 a, 24 b of thedrain bus lines 24 are respectively commonly connected, whereby tests ofhigh precision can be conducted even by applying different voltages toadjacent gate bus lines and also to adjacent drain bus lines.

5. A Fifth Embodiment

The thin film transistor matrix device according to a fifth embodimentof the present invention will be explained with reference to FIGS. 33and 34.

FIG. 33 is a view of a pattern layout of the thin film transistor matrixdevice according to the present embodiment. FIG. 34 is an enlarged viewof the wiring region of the thin film transistor matrix device of FIG.33. The same members or members of the same kinds of the presentembodiment as the first to the fourth embodiments are represented bycommon reference numerals to simplify or not to repeat theirexplanation.

In the thin film transistor matrix device according to the presentembodiment, gate connection lines 24 a, 24 b which respectively commonlyconnect gate bus lines 14 a, 14 b, and a drive circuit on the gate sideare arranged on both sides of a transparent insulating substrate 10, anddrain connection lines 34 a, 34 b which respectively commonly connectdrain bus lines 16 a, 16 b, and a drive circuit for the drain side arearranged on both sides of the transparent insulating substrate 10.

A plurality of gate bus lines 14 are divided into odd number-th gate buslines 14 a and even number-th gate bus lines 14 b.

Bumps 18 a are formed on the ends of the odd number-th gate bus lines 14a on the right side as viewed in FIG. 33. Input terminals 20 a forreceiving signals from the outside are formed on the right margin of thetransparent insulating substrate 10. The gate connection line 24 a isextended longitudinally through an IC chip region 22 between the gateconnection line 24 a, and the input terminals 20 a and the bumps 18 a.

Bumps 18 b are formed on the ends of the even number-th gate bus lines14 b on the left side as viewed in FIG. 33. Input terminals 20 b forreceiving signals from the outside are formed on the left margin of thetransparent insulating substrate 10. The gate connection line 24 b isextended longitudinally through an IC chip region 22 between the inputterminals 20 b and the bumps 18 b.

Bumps 28 a are formed on the ends of the odd number-th drain bus lines16 a on the upper side as viewed in FIG. 33. Input terminals 30 a forreceiving signals from the outside are formed on the upper margin of thetransparent insulating substrate 10. The gate connection line 34 a isextended longitudinally through an IC chip region 32 between the inputterminals 30 a and the bumps 28 a.

Bumps 28 b are formed on the ends of the even number-th drain bus lines16 b on the lower end as viewed in FIG. 33. Input terminals 30 b forreceiving signals from the outside are formed on the lower margin of thetransparent insulating substrate 10. The gate connection line 34 b isextended longitudinally through an IC chip region between the inputterminals 30 b and the bumps 28 b.

Resistant lines 38 a, 38 b, 38 c, 38 d interconnect the gate connectionlines 24 a, 24 b and the drain connection lines 34 a, 34 b. Theresistant line 38 a interconnects the gate connection line 24 a and thedrain connection line 34 a; the resistant connection line 38 binterconnects the gate connection line 24 a and the drain connectionline 34 b; the resistant line 38 c interconnects the gate connectionline 24 b and the drain connection line 34 a; and the resistant line 38d interconnects the gate connection line 24 b and the drain connectionline 34 b.

As described above, the gate bus lines 14 a, 14 b are respectivelycommonly connected to the gate connection lines 24 a, 24 b, and thedrain bus lines 16 a, 16 b are respectively commonly connected to thedrain connection lines 34 a, 34 b, whereby in the process forfabricating the thin film transistor matrix device and in the processfor forming a liquid crystal panel, even when electrostatic charges areapplied, there is no local presence of charges, and electric stressescan be mitigated. Furthermore, according to the present embodiment, thegate bus lines 14 a, 14 b which are adjacent to each other arerespectively commonly connected to the gate connection lines, and thedrain bus lines 24 a, 24 b which are adjacent to each other arerespectively commonly connected to the drain connection lines, wherebydifferent voltages are applied to the gate bus lines which are adjacentto each other and to the drain bus lines which are adjacent to eachother, whereby inspection of high precision can be conducted.

6. Variations

The present invention is not limited to the above-described embodimentsand includes other variations.

For example, in the above-described embodiments, the present inventionis applied to inverse-staggered TFT matrix device but is also applicableto devices of other device structures, such as staggered TFT matrixdevices.

In the above-described embodiments, the gate bus lines and the drain buslines are respectively grouped as even-number-th ones and odd number-thones to be connected to the respective connection lines by group, butthe present invention is not limited to this connection mode. The gatebus lines and the drain bus lines may be grouped in other combinationsto be commonly connected to the connection lines.

1. A thin film transistor matrix device comprising: an insulatingsubstrate; a plurality of lines arranged on said substrate, said linesbeing defined as odd-number-th lines alternating with even-number-thlines; a first connection line extending in a direction transverse tosaid plurality of lines, said first connection line and saidodd0number-th lines being configured and arranged to be electricallyconnected/disconnected to/from each other; and a second connection lineextending in a direction transverse to said plurality of lines, saidsecond connection line and said even-number-th lines being configuredand arranged to be electrically connected/disconnected to/from eachother.